vishay general semiconductor sb2h90 & sb2h100 new product document number 88718 18-may-06 www.vishay.com 1 high-voltage schottky rectifier high barrier technology for improv ed high temperature performance features ? guardring for overvoltage protection ? low power losses and high efficiency ? low forward voltage drop ? low leakage current ? high forward surge capability ? high frequency operation ? component in accordance to rohs 2002/95/ec and weee 2002/96/ec typical applications for use in middle voltage high frequency inverters, freewheeling, dc-to-dc converters and polarity protection applications. mechanical data case: do-204ac (do-15) epoxy meets ul 94v-0 flammability rating terminals: matte tin plated leads, solderable per j-std-002b and jesd22-b102d e3 suffix for commercial grade, he3 suffix for high reliability grade (aec q101 qualified) polarity: color band denotes the cathode end do-204ac (do-15) major ratings and characteristics i f(av) 2.0 a v rrm 90 v, 100 v i fsm 75 a v f 0.65 v i r 10 a t j max. 175 c maximum ratings (t a = 25 c unless otherwise noted) parameter symbol sb2h90 sb2h100 unit maximum repetitive peak reverse voltage v rrm 90 100 v working peak reverse voltage v rwm 90 100 v maximum dc blocking voltage v dc 90 100 v maximum average forward rectified current at t a = 25 c i f(av) 2.0 a peak forward surge current 8.3 ms single half sine-wave superimposed on rated load i fsm 75 a peak repetitive reverse surge current at t p = 2.0 s, 1 khz i rrm 1.0 a critical rate of rise of reverse voltage dv/dt 10000 v/s storage temperature range t stg - 55 to + 175 c maximum operating junction temperature t j 175 c
www.vishay.com 2 document number 88718 18-may-06 vishay general semiconductor sb2h90 & sb2h100 note: (1) pulse test: 300 ms pulse width, 1 % duty cycle note: (1) p.c.b. mounted with 0.2 x 0.2" (5.0 x 5.0 mm) copper pad areas ratings and characteristics curves (t a = 25 c unless otherwise noted) electrical characteristics (t a = 25 c unless otherwise noted) parameter test conditions symbol sb2h90 sb2h100 unit maximum instantaneous forward voltage (1) i f = 2.0 a, i f = 2.0 a, t j = 25 c t j = 125 c v f 0.79 0.65 v maximum dc reverse current at rated dc blocking voltage (1) t j = 25 c t j = 125 c i r 10 4.0 a ma thermal characteristics (t a = 25 c unless otherwise noted) parameter symbol sb2h90 sb2h100 unit typical thermal resistance (1) r ja r jl 45 14 c/w ordering information preferred p/n unit weight (g) preferred package code base quantity delivery mode sb2h100-e3/54 0.398 54 4000 13" diameter paper tape & reel sb2h100-e3/73 0.398 73 2000 ammo pack packaging figure 1. forward current derating curve 0 3.0 4.0 50 25 0 75 100 125 150 175 a v erage for w ard c u rrent (a) am b ient temperat u re (c) 2.0 1.0 200 figure 2. typical instantaneous forward characteristics 0.2 0 0.4 0. 8 1.0 0.01 0.1 10 1 instantaneo u sfor w ard c u rrent (a) instantaneo u sfor w ard v oltage ( v ) 1.2 0.6 1.4 100 t j = 100 c t j = 175 c t j = 150 c t j = 125 c t j = 25 c
document number 88718 18-may-06 www.vishay.com 3 sb2h90 & sb2h100 vishay general semiconductor package outline dimensions in inches (millimeters) figure 3. typical reve rse characteristics figure 4. typical j unction capacitance 20 60 40 100 8 0 instantaneo u sre v erse c u rrent ( a) percent of rated peak re v erse v oltage ( % ) 0.1 0.01 1 10000 100 10 1000 t j = 100 c t j = 150 c t j = 125 c t j = 25 c re v erse v oltage ( v ) j u nction capacitance (pf) 0.1 10 1 100 100 1000 10 10000 figure 5. typical transient thermal impedance 0.01 10 1 100 10 100 0.1 1 t - p u lse d u ration (s) transient thermal impedance (c/ w ) 0.034 (0. 8 6) 0.02 8 (0.71) dia. 0.140 (3.6) 0.104 (2.6) dia. 0.230 (5. 8 ) 0.300 (7.6) 1.0 (25.4) min. 1.0 (25.4) min. do-204ac (do-15)
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